At the invitation of Institute of Metal Research (IMR), Dr. Tom Wu from Nangyang Technological University visited IMR from May 10 to May 24, as a recipient of 2012 Lee Hsun Young Scientist Lecture Award. During the visit, Dr. Tom Wu delivered a lecture titled “Interface-based memory and field effect devices made of complex oxides: an emerging game of oxide electronics”. Before the lecture, Prof. YANG Rui the Deputy Director of IMR presented the plaque of Lee Hsun Young Scientist Lecture Award to Dr. Tom Wu. The excellent lecture got a high attention and praise. After the lecture, Dr. Tom Wu answered the audience’s questions. He also had an academic discussion with many researchers in relevant fields.

Dr. Tom Wu, the assistant professor of Nanyang Technological University, received his B.S. from Zhejiang University in 1995 and Ph.D. from the University of Maryland, College Park in 2002. After working as a postdoc in Materials Science Division and Center for Nanoscale Materials of Argonne National Laboratory, he joined the faculty of Nanyang Technological University in 2006. Dr. Wu has authored/co-authored more than 100 papers and gave about 50 invited talks worldwide. His research group focuses on designing and synthesizing oxide thin films, nanomaterials and heteostructures, exploring their emergent physical properties, and fabricating novel devices in the areas of spintronics, multiferroics, resistive switching memory, and field effect transistors.

Prof. YANG Rui presented the plaque of Lee Hsun Young Scientist Lecture Award to Dr. Tom Wu. (image by IMR)

Dr. Tom Wu delivered a lecture to IMR. (image by IMR)